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M61041FP
4-Battery Version, No Reset Pin
REJ03F0063-0100Z Rev.1.0 Sep.19.2003 This product is currently under development, and its specifications, pin assignments, etc., are subject to change.
Description
The M61041FP is an semiconductor IC device developed for smart battery packs. It incorporates all the analog circuitry required by smart batteries in a single chip. When used in conjunction with a microprocessor, it allows the implementation of a variety of functions, such as battery capacity detection, through the addition of minimal peripheral devices and is ideal for smart battery system (SBS) battery packs. The M61041FP also has an on-chip overcurrent detect circuit so that the FET for controlling battery charging and discharging is protected regardless of the processing speed of the microprocessor. The microprocessor can change the amplifier gain of the charge/discharge current detect circuit, so battery capacity detection accuracy is increased. In addition, the M61041FP incorporates a linear regulator that allows it to function as the power supply for the microprocessor, thereby simplifying power supply block design.
Features
* * * * * * On-chip high-gain op-amp for monitoring charge and discharge current. On-chip overcurrent detect circuit to protect FET. Charge/discharge FET can be controlled from microprocessor. Power-save function for reducing current consumption. 5.2 V operation to reduce microprocessor current consumption. High-voltage device (absolute maximum rating: 33 V).
Application
* Smart battery system (SBS) battery packs This product is currently under development, and its specifications, pin assignments, etc., are subject to change.
1 2
16 15 14 13 12 11 10 9 16P-TSSOP VREG DI CK CS CIN Analog_out VIN_11 GND
VCC VIN_1 VIN_2 VIN_3 VIN_4 VIN_12 DFOUT CFOUT
M61041FP
3 4 5 6 7 8
Figure 1 Pin Connection Diagram (Top View)
Rev.1.0, Sep.19.2003, page 1 of 28
M61041FP
CFOUT VCC VREG
Series regulator FET control circuit Overcurrent detect circuit
DFOUT
CIN
VIN_12
Delay circuit
Regulator On/off control Power-down circuit
VIN_1 CK DI CS
Serial/parallel converter circuit Charge/discharge current detect circuit Battery voltage detect circuit
VIN_2
VIN_3
Gain switcher circuit
VIN_4
Battery 1-4 analog output
Analog _OUT
Output selector
Shift voltage adjustor
VIN_11
GND
Figure 2 Block Diagram
Pin Function Description
Table 1
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Symbol Vcc VIN_1 VIN_2 VIN_3 VIN_4 VIN_12 DFOUT CFOUT GND VIN_11 Analog_OUT CIN CS Function The chip's power supply pin. Power is supplied by the charger or the battery. Positive input pin for lithium ion battery 1. Negative input pin for lithium ion battery 1. Positive input pin for lithium ion battery 2. Negative input pin for lithium ion battery 2. Positive input pin for lithium ion battery 3. Negative input pin for lithium ion battery 3. Positive input pin for lithium ion battery 4. Charger connect monitor pin. Detects changes from power-down status. Output pin for discharge FET on/off signals. Also turns off when overcurrent detected. Output pin for charge FET on/off signals. Ground pin. Negative input pin for lithium ion battery 4. Connected to charge/discharge current sensor resistor. Charge/discharge current monitor pin. Connected to charge/discharge current sensor resistor. Output pin for analog signals. Capacity connection pin for setting overcurrent prevention delay time. When this pin is low level, data input is accepted and data can be stored in a 6-bit shift register. At the rising edge from low to high the value in the 6-bit shift register is latched. Shift clock input pin. At the rising edge to high the input signal from the DI pin is input to the 6-bit shift register. Shift data input pin. Serial data with a data length of 6 bits may be input via this pin. Power supply pin for microprocessor. Power can be shut off using a signal from the microprocessor.
14 15 16
CK DI Vreg
Rev.1.0, Sep.19.2003, page 2 of 28
M61041FP
Operation
The M61041FP is an semiconductor IC device developed for smart battery packs. It is ideal for smart battery system (SBS) battery packs that consist of four lithium ion batteries connected in series. A high-voltage device, it is suitable for use with a wide variety of charger systems. It incorporates all the analog circuitry required by smart batteries in a single chip. When used in conjunction with a microprocessor, it allows the implementation of a variety of functions, such as battery capacity detection, through the addition of minimal peripheral devices. The functions of the M61041FP are described below. 1. Battery Voltage Detect Circuit The M61041FP can output the voltage levels of the batteries connected in series via the Analog_out pin. An onchip buffer amplifier monitors the pin voltages of the batteries. Offset voltage correction using adjustment by the microprocessor is also supported. The M61041FP is configured to detect the battery voltage using a microprocessor driven using a power supply voltage of 5.2 V.
2. Charge/Discharge Current Detect Circuit SBS requires a function for monitoring the battery capacity. The M61041FP uses an on-chip amplifier to monitor battery capacity based on a drop in the voltage of an external sensor resistor. In this way, the charge/discharge current is converted into a voltage. The voltage amplification ratio can be adjusted from the microprocessor. In addition, the current output shift voltage can be adjusted from the microprocessor, widening the allowable dynamic range of the A/D converter.
3. Overcurrent Detect Circuit The M61041FP has an on-chip overcurrent detect circuit. If an excessive current flows from the lithium ion batteries, the discharge control FET is shut off after a set delay time, halting discharge. This makes the battery pack safer. The delay time can be set using an external capacitor. It is possible to determine the overcurrent detect status by monitoring the CIN pin. The overcurrent detect circuit provides protection regardless of the processing speed of the microprocessor.
4. Series Regulator The M61041FP has an on-chip low-dropout series regulator. It can be used as the power supply for the microprocessor, thereby simplifying power supply block design.
VCC VREF1 +
M1 Vreg ON/OFF R1 R2
From serial/parallel converter circuit
Figure 3 Series Regulator
Rev.1.0, Sep.19.2003, page 3 of 28
M61041FP 5. Power-Save Function The M61041FP is equipped with a power-save function. When the battery voltage is being monitored a portion of the charge/discharge current monitor circuit automatically stops operating, and when the charge/discharge current is being monitored the battery voltage monitor circuit automatically stops operating. This helps prevent unnecessary power consumption. In addition, current consumption is further reduced by setting the analog output selector to ground potential output when in the standby mode. Transition to Power-Down Mode When the microprocessor determines that the battery voltage has dropped it sends a power-down instruction via the interface circuit. When it receives the instruction, the M61041FP's DFOUT pin switches to high voltage. In addition, the VIN_12 pin is pulled down to low level by an internal resistor. When the VIN_12 pin goes to low potential after reception of the power-down instruction, output from the series regulator stops, switching the M61041FP into power-down mode. At this point the operation of the circuitry is completely halted. In this status CFOUT is high level and DFOUT is high level (external charge/discharge prohibited status). The maximum current consumption of the M61041FP is 1.0 A in order to prevent any further drop in the battery voltage. Cancellation of Power-Down Mode If the battery pack is connected to a charger when the M61041FP is in the power-down mode (VIN_12 becomes high level), the series regulator immediately begins to operate. The power-down mode is canceled, and once again the M61041FP is ready to receive instructions from the microprocessor.
DFOUT VIN_12
VCC
CFOUT
Ground level after excess discharge
Control signals from interface circuit VIN_1
Vreg
Series regulator
Regulator On/off control Internal reset circuit CK DI CS Serial/parallel converter circuit
Figure 4 Operation After Excess Discharge Detection
M61041FP
Rev.1.0, Sep.19.2003, page 4 of 28
M61041FP
Absolute Maximum Ratings
Table 2
Item Absolute maximum rating Power supply voltage Allowable loss Ambient operating temperature Storage temperature Symbol Vabs Vcc PD Topr1 Tstg Rated Value 33 30 500 -20 to +85 -40 to +125 Unit V V mW C C Conditions
Standard
CK TSDI THDI DI TSCS CS
Figure 5 Interface Block Timing Definitions
THCS
Rev.1.0, Sep.19.2003, page 5 of 28
M61041FP
Electrical Characteristics
Table 3 (Ta = 25C, Vcc = 14 V unless otherwise specified)
Rated Value Block All Item Power supply voltage Circuit current 1 Circuit current 2 Circuit current 3 Circuit current (power-down mode) Regulator Output voltage Input stability Load stability Input voltage (VCC pin) Overcurrent detect Overcurrent prevention voltage 1 Overcurrent prevention voltage 2 Overcurrent prevention delay time 1 Overcurrent prevention delay time 2 Battery voltage detect Input offset voltage 1 Voltage amplification ratio 1 Output source current capacity Output sink current capacity Maximum detect battery voltage Isource1 150 A 6 8 Tvd1 7 10 15 ms 3 5 CICT = 0.01F Vreg Vout10 Vout20 VIN0 Vd1 5.075 6.2 0.18 5.2 60 30 0.2 5.325 100 50 30 0.22 V mV mV V V 2 2 2 2 3 5 Isup2 Isup3 Ipd 55 25 140 80 200 115 0.5 A A A 1 1 1 2 3 4 Symbol Vsup Isup1 Min. 60 Typ. 150 Max. 30 215 Unit V A Circuit 1 1 Command 1 During charge/discharge current monitoring During battery voltage monitoring During ground output (initial status) All circuits halted, VIN_12 = GND Vcc = 14V, Iout = 20mA Vcc = 6.2V to 24V, Iout = 20mA Vcc = 6.2V, Iout = 0.1mA to 20mA Conditions
Vd2
Vcc/3x0.6
Vcc/3
Vcc/3x1.4
V
4
5
Load short detected
Tvd2
150
250
350
s
4
5
Voff1 Gamp1
31 0.99
206 1.0
385 1.01
mV
5 5
6 7
Isink1
150
A
6
9
Vmo_max
4.64
V
5
(Vreg-Voff1)/Gamp 1
Rev.1.0, Sep.19.2003, page 6 of 28
M61041FP
Rated Value Block Charge/ discharge current detect Item Input offset voltage Voltage amplification ratio 21 Voltage amplification ratio 22 Voltage amplification ratio 23 Current output shift voltage 1 Current output shift voltage 2 Current output shift voltage 3 Current output shift voltage 4 Output source current capacity Output sink current capacity Interface DI input H voltage DI input L voltage CS input H voltage CS input L voltage CK input H voltage CK input L voltage DI setup time DI hold time CS setup time CS hold time VCKL TSDI THDI TSCS THCS 0 600 600 600 600 0.5 V ns ns ns ns 9 9 9 9 9 Isink2 150 A 8 18* Vios1 Vios2 Vios3 Vios4 Isource2 0.96 1.93 2.91 3.49 150 1.04 2.08 3.12 3.74 1.12 2.23 3.33 3.99 V V V V A 7 7 7 7 8 14* 15* 16* 17* 18* Gain23 192 200 208 7 13* Symbol Voff2 Gain21 Min. 1.0 38.4 Typ. 2.4 40 Max. 3.8 41.6 Unit V Circuit 7 7 Command 10* 11* Conditions Gain = 200
Gain22
96
100
104
7
12*
VDIH VDIL VCSH VCSL VCKH
Vreg-0.5 0 Vreg-0.5 0 Vreg-0.5

Vreg 0.5 Vreg 0.5 Vreg
V V V V V
9 9 9 9 9

Refer to figures 1 to 9 for the circuits and to table 4 for the command sequences used for measurement. * For the charge/discharge current detect block, different command sequences are used during charging and discharging.
Rev.1.0, Sep.19.2003, page 7 of 28
M61041FP
Measurement Circuit Diagrams
During Ipd measurement: S1 = off, S2 = on All other times: S1 = on, S2 = off
CFOUT VCC VIN_1 VIN_2
DFOUT VIN_12 VREG DI CK CS CIN ANALOG _OUT
S1 S2
CREG 4.7F
A
VIN_3 VCC VIN_4 GND VIN_11
M61041FP
Data input VREG VSS CIN 0.01F
VCK
S1
VCS
Circuit 1
VDI
CFOU T VCC VIN_1 VIN_2 VIN_3 VCC VIN_4 GND VIN_11
DFOUT VIN_12 VREG
S3
S2
V
M61041FP
DI CK CS CIN ANALOG _OUT Data input VREG VSS CIN 0.01F
VCK
VCS
Circuit 2
Rev.1.0, Sep.19.2003, page 8 of 28
VDI
VM_reg
VS_reg
CREG
M61041FP
CFOUT VCC VIN_1
DFOUT VIN_12 VREG CREG 4.7F
V
M61041F P
VIN_2 VI N_3 VCC VIN_4 GND VIN_11
DI CK CS CIN ANALOG _OUT Data input VREG VSS CIN 0.01F
VCK
VCS
VIN_11
Circuit 3
CFOUT VCC VIN_1 VIN_2 VIN_ 3 VCC VIN_4 GND VIN_11
DFOUT VIN_12 VREG
VIN_12
VDI
V
CREG 4.7F
M61041FP
DI CK CS CIN ANALOG _OUT Data input VREG VSS CIN 0.01F
VCK
VCS
Circuit 4
Rev.1.0, Sep.19.2003, page 9 of 28
VDI
M61041FP
CFOUT VCC VIN_1 VBAT1
DFOUT VIN_12 VREG CREG 4.7F
M61041FP
VIN_2 VBAT2 VIN_3 VBAT3 VIN_4 VBAT4 GND VIN_11
DI CK CS CIN ANALOG _OUT Data input VREG VSS CIN 0.01F
VCK
VCS
VDI
V
Circuit 5
CFOUT VCC VIN_1 VBAT1
DFOUT VIN_12 VREG CREG 4.7F
M61041FP
VIN_2 VBAT2 VIN_3 VBAT3 VIN_4 VBAT4 GND VIN_11
DI CK CS CIN ANALOG _OUT Data input VREG VSS CIN 0.01F
VCS
VCK
VDI
A
Circuit 6
Rev.1.0, Sep.19.2003, page 10 of 28
M61041FP
CFOUT VCC VIN_1
DFOUT VIN_12 VREG CREG 4.7F
M61041FP
VIN_2 VI N_3 VCC VIN_4 GND
VIN_11
DI CK CS CIN ANALOG _OUT Data input VREG VSS CIN 0.01F
VIN_11
VCK
VCS
VDI
V
Circuit 7
CFOUT VCC VIN_1
DFOUT VIN_12 VREG CREG 4.7F
M61041FP
VIN_2 VIN_3 VCC VIN_4 GND
DI CK CS CIN ANALOG _OUT Data input VREG VSS CIN 0.01F
VIN_11
VIN_11
VCS
VCK
VDI
A
Circuit 8
Rev.1.0, Sep.19.2003, page 11 of 28
M61041FP
V V
CFOUT VCC VIN_1 VBAT1 VIN_2 VBAT2 VIN_3 VBAT3 VIN_4 VBAT4 GND
VIN_11
DFOUT VIN_12 VREG VIN_12 CREG 4.7F
M61041FP
DI CK CS CIN ANALOG _OUT Data input VREG VSS CIN 0.01F
VIN_11
VCS
VCK
VDI
V
Circuit 9
Table 4 Command Sequences Used for Measuring Rated Values
No 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Command Sequence (00)8 (24)8 (31)8 (43)8 (52)8 (00)8 (13)8 (43)8 (51)8 (00)8 (00)8 (71)8 (00)8 (43)8 (00)8 (51)8 (14)8 (15)8 (16)8(17)8 (00)8 (51)8 (10)8 (11)8 (12)8(13)8 (00)8 (51)8 (13)8 (00)8 (51)8 (17)8 (00)8 (43)8 (52)8 (37)8 (00)8 (43)8 (52)8 (31)8 (35)8 (00)8 (43)8 (52)8 (32)8 (36)8 (00)8 (43)8 (52)8 (33)8 (37)8 (00)8 (43)8 (52)8 (31)8 (24)8 (00)8 (43)8 (52)8 (31)8 (25)8 (00)8 (43)8 (52)8 (31)8 (26)8 (00)8 (43)8 (52)8 (31)8 (27)8 (00)8 (43)8 (52)8 (31)8 VIN_11 Input 90mV 0mV 0mV 0mV 0mV 0mV 0mV 0mV 0mV 0mV 90mV 25mV 3mV 90mV 90mV 90mV 90mV 45mV
Notes : 1. Indications such as (00)8 show the address and data, in that order, of the serial data from the microprocessor in octal notation. 2. Numbers 10 to 17 are command sequences used during charging. For the commands used during discharging, substitute (53)8 for (52)8. 3. During measurement, the voltage listed in table 4 should be input to VIN_11. When measuring during charging, the specified voltage should be input to VIN_11 as a negative voltage. The specified voltage should be input to VIN_11 as a positive voltage during discharging.
Rev.1.0, Sep.19.2003, page 12 of 28
M61041FP
Description of Circuit Blocks
(1) Battery Voltage Detect Circuit As shown in figure 6, the battery voltage detect circuit block of the M61041FP consists of switches, a buffer amplifier, a reference voltage circuit, and a logic circuit. When the voltage to be detected is selected, based on serial data from the microprocessor, the appropriate switch connections are determined by the logic circuit. The voltages Vbat1, Vbat2, Vbat3, and Vbat4 from the batteries connected to the M61041FP, multiplied by Gamp1 (1.0), are output from the Analog_out pin. It is also possible to output an offset voltage. In the power-save mode all the switches are turned off, so the current consumption of this circuit block is zero.
Note : The settling time of this circuit block after voltage changes is about 50 s.
VIN_1 S11 Vbat1
VIN_2
S22
Switch control From serial/parallel converter circuit
Vbat2
S21
Logic circuit
VIN_3
S32
Vbat3
S31 R2=R1 R2 VIN_4 S42 R1
Vbat4
R1 S41 R2 GND Voff to Analog_Out
S02 GND S01
Figure 6 Battery Voltage Detect Circuit
Rev.1.0, Sep.19.2003, page 13 of 28
M61041FP Battery Voltage Monitoring Method To select battery voltage detection, serial data (51)8 is sent from reset status (00)8. The V1 battery voltage (Vin1) is output from the analog output pin by sending (10)8. Next, (14)8 is sent to switch the analog output pin from the V1 battery voltage to the V1 offset voltage (Voff1). The actual voltage (Vbat1) can be obtained by the microprocessor by calculating Vbat1 = (Vin1 - Voff1) / Gamp. The same method can be used for Vbat2 to Vbat4 in order to monitor the battery voltage with a high degree of accuracy.
(2) Charge/Discharge Current Detect Block As shown in figure 7, the charge/discharge current detect block of the M61041FP consists of a preamplifier current output shift voltage adjustment circuit, a buffer amplifier, and dividing resistors. The voltage difference indicated by the sensor resistor is amplified to the ground reference voltage by the preamplifier. The gain can be switched using serial signals from the microprocessor. The output is impedance converted by the buffer amplifier. It is also possible to switch the current detect shift voltage using the microprocessor.
Vreg = 5.2V AMP2 AMP3 to Analog_Out RC1 R RC2 R Charge current monitor RC3 From serial/parallel converter circuit
R RD1 R Charge current monitor RD2 RD3
AMP1 AMP4 Shift voltage adjustment circuit From serial/parallel converter circuit GND
VIN_11
GND
Rsense
Figure 7 Charge/Discharge Current Detect Block
Figure 8 illustrates the circuit block's operation during discharge current detection. The discharge current flows into Rsense, and any voltage drop that occurs is applied to the positive terminal of the amplifier (AMP1). The amplifier's gain can be increased by an instruction from the microprocessor, making it possible to monitor even minute discharge currents with high accuracy. To allow monitoring of the charge current, the voltage generated by VIN_11 is inverted and amplified before being output. The other aspects use the same operating principle as that described above.
Rev.1.0, Sep.19.2003, page 14 of 28
M61041FP
Vb=Icha x Rsens x Gain RC3 RC2
From interface circuit
AMP2 RC1
RD1 AMP1 RD2 RD3 GND
Va=Idis x Rsens x Gain VIN_11
Charge current
Rsense
I c h a Discharge I d i s current
Figure 8 Charge/Discharge Current Detect Explanation Diagram
(3) Overcurrent Detect Circuit Block As shown in figure 9, the overcurrent detect circuit block of the M61041FP consists of a comparator, a reference voltage circuit, and a delay circuit. The detection voltage can be adjusted by trimming, making possible highly accurate voltage detection in conjunction with a sensor resistor. In addition, it is possible to determine when the M61041FP is in overcurrent detect status by monitoring the CIN pin using the microprocessor. The M61041FP is also equipped with a simplified load detect circuit. Based on the status of the Vin12 pin it is possible to provide protection with a shorter delay time than when using overcurrent detection.
DFOUT VIN_12
To microprocessor
Delay circuit
+ Vref1
Battery
CIN VIN_11 GND Rsense
Figure 9 Overcurrent Detect Circuit Block
Rev.1.0, Sep.19.2003, page 15 of 28
M61041FP (4) Series Regulator The series regulator circuit is shown in figure 10. A Pch MOS transistor is used as the output control transistor. The output voltage is adjusted by the M61041FP internally, so no external devices, such as resistors, are required. Note : Due to the structure of the control transistor a parasite diode is formed between VCC and Vreg. This means that the M61041FP can be destroyed by reverse current if the Vreg potential exceeds VCC. Consequently, Vreg should be limited to VCC + 0.3 V or less.
VCC
VREF1 + M1 Vreg ON/OFF R1 R2
From serial/parallel converter circuit
Figure 10 Series Regulator
Digital Data Format
First 6-bit shift register
Last
Address
decoder
Latch
Battery voltage adjuster
Latch
Shift voltage adjuster
Latch
Current gain adjuster
Latch
Latch
Latch
VR, overcurrent controller
FET controller
Output selector
Figure 11 Serial/Parallel Converter Circuit Block Diagram
Rev.1.0, Sep.19.2003, page 16 of 28
M61041FP Data Timing Diagram (Model)
Figure 12 Serial/Parallel Converter Circuit Timing Chart Data Content Table 5
Address Setting Data Reset Battery voltage selector Current output shift voltage adjuster Current monitor gain adjuster FET controller Output selector Regulator Overcurrent detection controller D5 0 0 0 0 1 1 1 D4 0 0 1 1 0 0 1 D3 0 1 0 1 0 1 1 Data D2 D1 D0 Content See table 8 See table 9 See table 10 See table 11 See table 12 See table 13
Data Content Table 6 Battery Voltage Selector
D5 to D3 001 001 001 001 001 001 001 001 D2 0 0 0 0 1 1 1 1 D1 0 0 1 1 0 0 1 1 D0 0 1 0 1 0 1 0 1 Output Voltage V1 voltage V2 voltage V3 voltage V4 voltage V1 offset voltage V2 offset voltage V3 offset voltage V4 offset voltage Note Selected after reset
* V1 voltage is selected after reset.
Table 7 Current Output Shift Voltage Adjuster
D5 to D3 010 010 010 010 010 010 010 010 D2 0 0 0 0 1 1 1 1 D1 0 0 1 1 0 0 1 1 D0 0 1 0 1 0 1 0 1 Current Output Shift Voltage Value 0 V (no shift voltage) 0 V (no shift voltage) 0 V (no shift voltage) 0 V (no shift voltage) 1V 2V 3V 3.6V Vreg/25x5 Vreg/25x10 Vreg/25x15 Vreg/25x18 Note Selected after reset
* No current output shift voltage after reset.
Rev.1.0, Sep.19.2003, page 17 of 28
M61041FP Table 8 Charge/Discharge Current Detector
D5 to D3 011 011 011 011 011 011 011 011 D2 0 0 0 0 1 1 1 1 D1 0 0 1 1 0 0 1 1 D0 0 1 0 1 0 1 0 1 Output Gain Switch Amplifier off 40x (current value output) 100x (current value output) 200x (current value output) Amplifier off 40x (offset output) 100x (offset output) 200x (offset output) Note Selected after reset
Same as after reset
* Amplifier off after reset.
Table 9 FET Controller
D5 to D3 100 100 100 100 100 100 100 100 D2 0 0 0 0 1 1 1 1 D1 0 0 1 1 0 0 1 1 D0 0 1 0 1 0 1 0 1 CFOUT High Low High Low Don't care Don't care Don't care Don't care DFOUT High High Low Low Don't care Don't care Don't care Don't care Note Selected after reset
* DFOUT and CFOUT pins set to off after reset. (Current control FET is off when output is high level.)
Table 10 Output Selector
D5 to D3 101 101 101 101 101 101 101 101 D2 0 0 0 0 1 1 1 1 D1 0 0 1 1 0 0 1 1 D0 0 1 0 1 0 1 0 1 Output Selection Ground output Battery voltage value output Charge current value output Discharge current value output Don't care Don't care Don't care Don't care Note Selected after reset
* Ground potential output after reset.
Table 11 Regulator, Overcurrent Detection Controller
D5 to D3 111 111 111 111 111 111 111 111 D2 0 0 0 0 1 1 1 1 D1 0 0 1 1 0 0 1 1 D0 0 1 0 1 0 1 0 1 Voltage Regulator Output ON OFF ON ON Don't care Don't care Don't care Don't care Overcurrent Detect Circuit ON OFF CIN pin fixed low CIN pin fixed high Don't care Don't care Don't care Don't care Note Selected after reset Both circuits off Overcurrent circuit off Overcurrent circuit off
* Regulator output and overcurrent circuit both on after reset. Note: A setting of 111001 caused the M61041FP to transition to the power-down mode. However, transition to the power-down mode does not occur when connected to a charger (VIN_12 is high level).
Rev.1.0, Sep.19.2003, page 18 of 28
M61041FP
Timing Charts
Charging Sequence
Battery voltage (V)
5 4 3 2 1 0 From bottom: Vbat1, Vbat2, Vbat3, Vbat4
Vbat4 reaches overcharge detect voltage Charging time
0.15 0.1 0.05 0 -0.05 -0.1 -0.15 20 15 10 5 0 20 15 10 5 0
Battery voltage (V)
During discharge During charging
Instruction from microprocessor Off during initialization Start of charging Instruction from microprocessor End of charging
Off during initialization
Start of charging Instruction from microprocessor
20 15 10 5 0 6
VIN_12 pin VCC pin
VIN_1 pin
Vreg (V)
4 2 0 6 4 2 0 Charger connected Battery 4 monitor Battery 2 Battery 3 Battery 1 monitor monitor monitor Microprocessor Gain 40 Battery voltage monitor operation start Charge current monitor Gain 200 Charger connected
Note: A fixed-voltage charger is used.
Figure 13 Charging Sequence
Rev.1.0, Sep.19.2003, page 19 of 28
M61041FP Discharge Sequence
Battery voltage (V)
5 4 3 2 1 0
Discharge time
Self-discharge time
From top: Vbat1, Vbat2, Vbat3, Vbat4
Vbat4 reaches excess discharge detect voltage
0.15 0.1 0.05 0 -0.05 -0.1 -0.15 20 15 10 5 0 20 15 10 5 0
Battery voltage (V)
During Start of discharge discharge Load connection During charging
End of discharge
Instruction from microprocessor
Off in power-down mode
End of discharge Instruction from microprocessor Off in power-down mode
20 15 10 5 0 6 4 2 0 6 4 2 0 Gain 200 Battery 1 Battery 2 Battery 3 monitor monitor monitor Battery 4 monitor Battery voltage monitor System stop Instruction from microprocessor VIN_1 pin VIN_12 pin Pulled down to ground potential when discharge prohibited VCC pin
Gain 40 Discharge current monitor
Figure 14 Discharge Sequence
Rev.1.0, Sep.19.2003, page 20 of 28
M61041FP Overcurrent Sequence
Battery voltage (V)
5 4 3 2 1 0 0.8 0.6 0.4 0.2 0
Vbat1=Vbat2=Vbat3=Vbat4
Rush current
Overcurrent
Load short
Rush current During discharge
Overcurrent
Load short
-0.2 20 15 10 5 0 20 15 10 5 0
Battery voltage (V)
End of discharge
End of discharge
20 15 10 5 0 6 4 2 0 6 4 2 0 VIN_12 pin
VIN_1 pin VCC pin
Discharge Gain 40 current monitor
Figure 15 Overcurrent Sequence
Rev.1.0, Sep.19.2003, page 21 of 28
M61041FP Principal Item Characteristics Overall
Current Consumption (ISUP1)-Power Supply Voltage (VCC) Characteristics Current Consumption (ISUP1)-Temperature (Ta) Characteristics
Vcc=14V
5V
10V
15V
20V
25V
30V
Current Consumption (ISUP2)-Power Supply Voltage (VCC) Characteristics
Current Consumption (ISUP3)-Temperature (Ta) Characteristics
Vcc=14V
5V
10V
15V
20V
25V
30V
Current Consumption (IPS)-Power Supply Voltage (VCC) Characteristics
Current Consumption (IPS)-Temperature (Ta) Characteristics
Vcc=14V
5V
10V
15V
20V
25V
30V
Current Consumption (IPD)-Power Supply Voltage (VCC) Characteristics
Current Consumption (IPD)-Temperature (Ta) Characteristics
Vcc=14V
5V
10V
15V
20V
25V
30V
Rev.1.0, Sep.19.2003, page 22 of 28
M61041FP Regulator Block
Regulator Output Voltage (VREG)-Power Supply Voltage (VCC) Characteristics Temp.=100C
5.30
Regulator Output Voltage (VREG)-Temperature (Ta) Characteristics Vcc=30V
5.30
5.25
5.25
5.20
5.20
5.15
30mA 20mA 10mA 0.1mA 10V 15V 20V 25V 30V
5.15
30mA 20mA 10mA 0.1mA -25C 0C 25C 50C 75C 100C
5.10 5V
5.10 -50C
Regulator Output Voltage (VREG)-Power Supply Voltage (VCC) Characteristics Temp.=25C
5.30
Regulator Output Voltage (VREG)-Temperature (Ta) Characteristics Vcc=14V
5.30
5.25
5.25
5.20
5.20
5.15
30mA 20mA 10mA 0.1mA 10V 15V 20V 25V 30V
5.15
30mA 20mA 10mA 0.1mA -25C 0C 25C 50C 75C 100C
5.10 5V
5.10 -50C
Regulator Output Voltage (VREG)-Power Supply Voltage (VCC) Characteristics Temp.=-25C
5.30
Regulator Output Voltage (VREG)-Temperature (Ta) Characteristics
5.30
Vcc=6V
5.25
5.25
5.20
5.20
5.15
30mA 20mA 10mA 0.1mA 10V 15V 20V 25V 30V
5.15
5.10 5V
5.10 -50C
30mA 20mA 10mA 0.1mA -25C 0C 25C 50C 75C 100C
Regulator Output Voltage (VREG)-Output Current (IREG) Characteristics Temp.=25C
6V 5V 4V 3V 2V 1V 0V 0.00A 6V 14V 30V 0.05A 0.10A 0.15A 0.20A 0.25A
Regulator Output Voltage (VREG)-Output Current (IREG) Characteristics Vcc=14V
6V 5V 4V 3V 2V 1V 0V 0.00A 90C 25C -30C 0.05A 0.10A 0.15A 0.20A 0.25A
Rev.1.0, Sep.19.2003, page 23 of 28
M61041FP Overcurrent Detect Block
Overcurrent 1 Detect Voltage (VIOV1)-Temperature (Ta) Characteristics Vcc=14V
0.22V
Overcurrent 1 Detect Delay Time (TIOV1)-Temperature (Ta) Characteristics
15mS
Vcc=14V
0.21V
13mS
0.20V
11mS
0.19V
9mS
0.18V -30C
0C
30C
60C
90C
7mS -30C
0C
30C
60C
90C Vcc=14V
Overcurrent 2 Detect Voltage (VCC/VIOV2)-Temperature (Ta) Characteristics Vcc=14V
4.2 3.8 3.4 3.0 2.6 2.2 1.8 -30C
Overcurrent 2 Detect Delay Time (TIOV2)-Temperature (Ta) Characteristics
0C
30C
60C
90C
-30C
0C
30C
60C
90C
Overcurrent Hold Detect Voltage (VCC-VIOVX)-Temperature (Ta) Characteristics
3.0V
Vcc=14V
Overcurrent 1 Detect Delay Time (TIOV1)-Capacitance (CICT) Characteristics Vcc=14V
500mS 450mS
2.8V
400mS 350mS
2.6V
300mS 250mS
2.4V
200mS 150mS
2.2V
100mS 50mS
2.0V -30C
0mS 0C 30C 60C 90C
Rev.1.0, Sep.19.2003, page 24 of 28
M61041FP Battery Voltage Detect Block
Battery Voltage Input Offset Voltage (VOFF1)-Temperature (Ta) Characteristics
0.40V 0.35V 0.30V 0.25V 0.20V 0.15V 0.10V -30C VREG=5.2V
Battery Voltage Amplification Ratio 1 (Gamp1)-Temperature (Ta) Characteristics VREG=5.2V
1.00% 0.75% 0.50% 0.25% 0.00% -0.25%
V1_offset V2_offset V3_offset V4_offset 0C 30C 60C 90C
-0.50% -0.75% -1.00% -30C
V1_Gain_err V2_Gain_err V3_Gain_err V4_Gain_err 0C 30C 60C 90C
Discharge XXXXX
Battery Voltage Input Offset Voltage (VOFF2)-Temperature (Ta) Characteristics
18mV 16mV 14mV 12mV 10mV 8mV 6mV -30C Offset 40 Offset100 Offset200 0C 30C 60C 90C VREG=5.2V VREG=5.2V
Discharge Current Input Offset Voltage (VOFF2)-Temperature (Ta) Characteristics VREG=5.2V
18mV 16mV 14mV 12mV 10mV 8mV 6mV -30C Offset 40 Offset100 Offset200 0C 30C 6C 90C
Battery Voltage Amplification Ratio (Gamp2)-Temperature (Ta) Characteristics
4% 3% 2% 1% 0% -1% -2% -3% -4% -30C
Discharge Current Amplification Ratio (Gamp2)-Temperature (Ta) Characteristics VREG=5.2V
4% 3% 2% 1% 0% -1%
Gain_err40 Gain_err100 Gain_err200 0C 30C 60C 90C
-2% -3% -4% -30C
Gain_err40 Gain_err100 Gain_err200 0C 30C 60C 90C
Rev.1.0, Sep.19.2003, page 25 of 28
M61041FP
Sample Application Circuit
To + terminal RIN12
DFET
CVCC
CFET See note 3. RCF
CIN1
CCF
VDD
VIN_12 DFOUT VREG CREG
VCC
CFOUT VIN_1
RIN1 CIN1 RIN2
Battery 1
Vcc SENCE
OUT
2
VREF Voltage Detect Circuit
VOU VIN
nd
VDET
VIN _2 CIN2 RIN3 VIN_3 CIN3 RIN4 VIN_4 CIN4
Battery 4 Battery 3 Battery 2
VIN_1
Protect
M61041FP
VIN_2
Reset See note 2. AD_IN1 CK CS DI AD_IN2 DGNDAGND ANALOG_OU CK CS DI CIN
Notes on Circuit Board Design 1. The current sensor resistor (RSENSE) should be located adjacent to the VSS and VIN_11 pins of the M61041FP. In addition, no circuitry other than that recommended above should be added between the M61041FP and RSENSE. Any extraneous current flow in this channel could result in errors when measuring the charge and discharge currents. 2. The load capacitance of the ANALOG_OUT pin, including parasite capacitance, should be no more than 10 pF. If a capacitor of more than 10 pF is connected, the output from ANALOG_OUT may begin to oscillate. 3. Power supply fluctuations during overcurrent detection and when connected to a charger may cause the M61041FP to reset. It is possible to prevent incorrect operation by connecting a CR filter to the control signal of the charge control FET.
Rev.1.0, Sep.19.2003, page 26 of 28
M37516
VIN_3
VIN_4
VIN_11 CIN11 RIN11
VSS See note 1.
CIN_1
CICT To - terminal RSENSE
Figure 16 Sample Application Circuit
M61041FP Table 12 External Device Constants
Device Pch MOSFET Pch MOSFET Resistor Capacitor Symbol DFET CFET RIN1 CIN1 Purpose Discharge control Charge control ESD countermeasure Power supply fluctuation countermeasure ESD countermeasure Power supply fluctuation countermeasure ESD countermeasure Power supply fluctuation countermeasure ESD countermeasure Power supply fluctuation countermeasure Resistor RIN11 Power supply fluctuation countermeasure Power supply fluctuation countermeasure Charger reverse connection countermeasure Power supply fluctuation countermeasure Capacitor CVCC Power supply fluctuation countermeasure Charge/discharge current monitoring Delay time setting Output voltage fluctuation countermeasure Power supply fluctuation countermeasure Power supply fluctuation countermeasure 0.22F 100 200 3) The upper value for confirmation of overcurrent operation should be adjusted as necessary. Recommen ded Value 10 0.22F Min. Max. 1k 1.0F Notes 1) Values differ among RIN2 to RIN4.
Resistor Capacitor
RIN2 CIN2
1k 0.22F

1M 1.0F
Resistor Capacitor
RIN3 CIN3
1k 0.22F

1M 1.0F
2) RIN2 and CIN2 should be set to the same value.
Resistor Capacitor
RIN4 CIN4
1k 0.22F

1M 1.0F
2) RIN2 and CIN2 should be set to the same value.
Capacitor
CIN11
0.1F
1.0F
Resistor
RIN12
10k
300
100k
3) The upper value for confirmation of overcurrent operation should be adjusted as necessary.
Capacitor
CIN12
0.01F
0.1F
Sensor resistor Capacitor Capacitor
RSENSE CICT CREG
20m 0.01F 4.7F
0.47F
0.47F

Resistor
RCF
1k
500
3) The upper value for confirmation of overcurrent operation should be adjusted as necessary.
Capacitor
CCF
0.1F
0.047F
Note: When designing applications, due consideration should be given to safety.
Rev.1.0, Sep.19.2003, page 27 of 28
M61041FP
Package Dimensions
16P2X
Note : Please contact Renesas Technology Corporation for further details.
Rev.1.0, Sep.19.2003, page 28 of 28
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
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